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Ultrafast, Soft Recovery Diode HEXFRED
TM
HFA30PB120
VR = 1200V VF(typ.)* = 2.3V IF(AV) = 30A Qrr (typ.)= 120nC IRRM(typ.) = 4.7A trr(typ.) = 47ns di(rec)M/dt (typ.)* = 240A/s
PD -2604A
Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count Description
TO-247AC (Modified)
International Rectifier's HFA16PB120 is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter Max. 1200 Units V
Cathode-to-Anode Voltage IF @ TC = 100C Continuous Forward Current IFSM Single Pulse Forward Current IFRM Maximum Repetitive Forward Current PD @TC = 25C PD @TC = 100C TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
VR
30 120 90 350 140 -55 to + 150
A W C
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* 125C
1
07/27/04
HFA30PB120
Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol VBR Parameter Cathode Anode Breakdown Voltage Min. 1200 --- VFM IRM CT LS Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance --- --- --- --- --- --- Typ. --- 2.4 3.1 2.3 1.3 1.1 50 8.0 Max. --- 4.1 5.7 4.0 40 4000 75 --- pF nH A V Units V IR = 100A IF = 30A IF = 60A IF = 30A, TJ = 125C VR = VR Rated VR = 200V package body Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified) Symbol trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 See Fig. 8 Parameter Reverse Recovery Time See Fig. 5, 10 Min. --- --- --- --- --- --- --- --- --- Typ. 47 110 170 10 16 650 1540 270 240 Max. --- 170 260 15 24 980 2310 --- --- nC A ns Units Conditions IF=1.0A, diF/dt=200A/s, VR = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C A/s TJ = 25C TJ = 125C diF/dt =200A/s VR = 200V IF = 30A See Fig. 2 See Fig. 3 TJ = 125C, VR = 0.8 x VR Rated Measured lead to lead 5mm from See Fig. 1 Conditions
di(rec)M/dt1 Peak Rate of Fall of Recovery Current di(rec)M/dt1 During tb
Thermal - Mechanical Characteristics
Tlead RqJA Rqcs Wt
dA
Parameter Lead Temperature Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Case-to-Heat Sink Weight Mounting Torque
Min. --- --- --- --- --- 6.0 5.0
Typ. --- --- --- 0.50 2.0 (0.07) --- ---
Max. 300 0.36 80 --- 12 10
Units C C/W g (oz.) kg-cm lbfxin
RqJC
eA fA
Notes: L=100H, duty cycle limited by max T J 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased
2
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10
1000
HFA30PB120
T J = 150C T J = 125C
Reverse Current - I R (A)
1 T J = 25C
IF, Instantaneous Forward Current (A)
100
0.1 200 400 600 800 1000 1200
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
10
1000
Junction Capacitance - CT (pF)
25C 125C 150C
100
TJ = 25C
1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VF, Forward Voltage Drop (V)
10 1 10 100 1000
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J J 1
R1 R1 2
R2 R2
R3 R3 3 C 3
0.01
1
2
Ri (C/W) i (sec) 0.234 0.000100 0.069 0.000434 0.056 0.002202
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
Ci= i/Ri Ci i/Ri
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
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Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
3
HFA30PB120
300 275 250 225 200
VR = 390V T J = 25C _____ T J = 125C ----------
35
IF = 60A IF = 30A IF = 15A
V = 390V R T = 25C _____ J T = 125C ---------J IF = 60A IF = 30A IF = 15A
30
25
150 125 100 75 50 25 0 100 150 200 250 300 350 400 450 500 diF /dt (A/s)
IRRM (A)
175
trr (ns)
20
15
10
5
0 100 150 200 250 300 350 400 450 500 diF/dt (A/s)
Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg)
3000
VR = 390V T J = 25C _____ IF
Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg)
900
V = 390V R T = 25C _____ J TJ = 125C ----------
= 60A
800 700 600 500 400 300 200
2500
T J = 125C ----------
IF = 30A IF = 15A
1500
di(rec)M / dt (A/s)
2000
Qrr (nC)
IF15A
1000
IF
= 30A
IF
= 60A
500
100
0 100 200 300 diF /dt (A/s) 400 500
0 100 150 200 250 300 350 400 450 500 diF /dt (A/s)
4
Fig. 7 - Typical Stored Charge vs. dif/dt, (per Leg)
Fig. 8 - Typical di(rec)M/dt vs. dif/dt, (per Leg)
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HFA30PB120
3
IF
trr ta tb
4
REVERSE RECOVERY CIRCUIT
VR = 200V
0
2
Q rr I RRM
0.5 I RRM di(rec)M/dt
5
0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S
1
0.75 I RRM di f /dt
4. Qrr - Area under curve defined by trr and I RRM trr X IRRM Q rr = 2 5. di(rec)M/dt - Peak rate of change of current during t b portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V
I L(PK)
DUT
DECAY TIME V (AVAL) V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
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5
HFA30PB120
TO-247AC (Modified) Package Outline Drawing
Dimensions are in millimeters (inches)
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04
6
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